THE STUDY OF SYNTHESIS FROM n-ZnO/p-Zn1-xLixO NANORODS HETEROJUNCTION BY EXTERNAL ELECTRICAL FIELD
The developments of light emitters device such light-emitting diode (LED) have attracted for the last decades. While Zone has a potential in semiconductor light emitting devices owing to its fundamental advantange like large exciton binding energy (60 meV) and direct wide-band gap (3.37 eV), that Zn...
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Format: | Theses |
Language: | Indonesia |
Online Access: | https://digilib.itb.ac.id/gdl/view/12708 |
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Institution: | Institut Teknologi Bandung |
Language: | Indonesia |
Summary: | The developments of light emitters device such light-emitting diode (LED) have attracted for the last decades. While Zone has a potential in semiconductor light emitting devices owing to its fundamental advantange like large exciton binding energy (60 meV) and direct wide-band gap (3.37 eV), that ZnO is considered as shorter wavelenght LED and efficient exciton. Because of Zone based on p-n junction, then high quality Zone p-n junction materials obtained is the keys step of its optoelectronic application. There are many reports claimed realization p-n type Zone that have been focused on one-dimensional (1D), such as nanorods. Because crystal size at nano-scale will produce high crystalline quality, the miniaturisation of device scale and thus providing for higher device density. In this research, n-ZnO/p-ZnLiO nanorod heterojuntion was synthesized in nano scale 1D using chemical solution deposition under external electrical field with configuration which positive electrode faced on ITO substrate surfaces. There are three steps of the research, first, study of the effect of external electrical field toward ZnO crystal growth, second, study of the concentration effect of Li+ dopan from p-Zn1-xLixO synthesizes toward morphology, optical properties and crystanillitas of ZnO Third, study of electrical properties (I-V characteristic) of n-ZnO/p-Zn1-xLixO. <br />
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