SYNTHESIS OF CACU3-XNIXTI4O12 (CCNTO) BY SOLID STATE REACTION AND ITS CHARACTERIZATION

• Main Author: KAMILA (NIM : 10508098); Pembimbing : Dr. Bambang Prijamboedi, HASBUNA
• Format: Final Project
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/15873
• Institution: Institut Teknologi Bandung

CCTO ceramic has giant dielectric constant (104-105), isolator properties, and stable at temperature of 100-600 K. This material have been widely used to fabricate capacitor, transistor, microwave devices, and DRAM (Dynamic Random Access Memory). Researchers have synthesized CaCu3-xNixTi4O12 (CCNTO) with maximum concentration of nickel, x = 0.1. Therefore, this research was performed with high Ni doped concentration to study the change of physical properties of Ni doped CCTO such as to be metallic. The aim of this research to investigate structure, dielectric constant, and transport properties of CaCu3-xNixTi4O12 with x variation from 0 to 3. In Ni doped CCTO with high concentration, it is predicted that electrical conductivity can increase. CCNTO was synthesized by solid state reaction. X-Ray Diffraction pattern has been investigated to determine its crystal structure. Conductivity measurement was performed by 4 probe and 2 probe methode. Dielectric constant of material was determined by LCR meter. The characterization results show that the cubic crystal system and Im ̅ symmetry is adopted by samples until x = 1. Furthermore, deformation of structure occurs in x = 2 and x = 3 which is consist of CaTiO3 and NiTiO3 phases. The increasing of Ni concentration in CCTO in contrary would decrease the conductivity as well as the dielectric constant. The possible cause of this phenomena are the deformation of CCTO phase