#TITLE_ALTERNATIVE#

• Main Author: NYOMAN GANDHI (NIM: 13206072); Dosen Pembimbing : Ir. Endon Bharata, MT, NGAKAN
• Format: Final Project
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/16680
• Institution: Institut Teknologi Bandung

In satellite communication systems, a Low Noise Amplifier is required at the receiver front end to enhance the value of the received signal by giving a good value of gain and lowest value of noise figure available. To meet the specification, a Low Noise Amplifier is designed at the S-Band frequency of operation specifically at 2.5 – 2.7 <br /> <br /> <br /> GHz. The LNA is designed using Rogers RO4350B™ substrate with dielectric constant of 3.48 and material thickness of 0.762 mm. The transistor used is HJ FET NE3510M04 issued by NEC Technologies. The impedance matching networks are <br /> <br /> <br /> fully designed with the aid of S-Parameter which is presented along with the datasheet at the DC biasing point of VDS = 2 volt and ID = 15 mA. The impedance matching networks are fully designed using microstrips. Microstrips are used because of the simplicity of its fabrication process and the placement of the surface mounted devices components. To improve the stability factor of the transistor, two resistors are used. One is a shunted resistor at the transistor’s input with the value of 560 &#937; and the other one is a series loaded resistor at the transistor’s output with the value of 10 &#937;. With the aid of the Smith Chart and the simulator program the length value of the stubs are obtained. IC ZNBG3010/3011 is used to give a DC biasing point to the device. This device is capable of providing drive up to three external FETs and a polarity switch function. With the addition of two capacitors and a resistor, the devices provide drain voltage and current control to the external FETs. The drain current value is controlled by the external resistor RCAL and to obtain the desired DC biasing point, the value of 23 k&#937; is chosen. Based on simulation result, the LNA gain is 16.28 dB, VSWRIN is 1.75 and VSWROUT is 1.59 at the frquecy of 2.6 GHz. The device is then fabricated on Rogers RO4350B™ substrate with the dimension of 7 x 5 cm. the measurement is carried out to validate the simulation results such as <br /> <br /> <br /> gain, VSWRIN and VSWROUT. The measurement of Noise Figure cannot be carried out because of lack of the measurement device. Based on measurement results, the LNA has a gain of 13.901 dB, VSWRIN of 1.44 and VSWROUT of 3.097 at 2.6 GHz <br /> <br /> <br /> frequency.