#TITLE_ALTERNATIVE#
In this study, MoS2 thin films have been deposited on top silicon and quartz substrate using mechanical exfoliation method. A small lump of bulk MoS2 was taken and uniformly smoothed using scotch tape, then deposited on top of each substrates at room temperature. Thereafter, SEM, XRD, and EDS charac...
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| Main Author: | |
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| Format: | Final Project |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/20645 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | In this study, MoS2 thin films have been deposited on top silicon and quartz substrate using mechanical exfoliation method. A small lump of bulk MoS2 was taken and uniformly smoothed using scotch tape, then deposited on top of each substrates at room temperature. Thereafter, SEM, XRD, and EDS characterizations are performed to identify topography, crystallinity, and elements contained. Furthermore, FTIR characterization is performed to observe atomic bondings that present in the samples. The results show that MoS2 thin films have been succesfully deposited on top of the substrates. We found that there is no MoS2 fingerprint from both silicon and quartz FTIR spectra. The peaks that observed denote the interaction characteristics between substrates and other elements, such as C, H, and O which present in growth environment and difficult to be avoided. Then, annealing process performed at temperature 5000C for 10 minutes and showed different spectra for both sample which present the activity of Mo and S atom . From these results, it can be concluded that IR active mode of MoS2 does not occur in FTIR range, so that it is necessary to use FTIR with higher resolution to identify MoS2 fingerprint. |
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