#TITLE_ALTERNATIVE#

• Main Author: NABILA (NIM : 10210029), EZRA
• Format: Final Project
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/22013
• Institution: Institut Teknologi Bandung

<p align="justify">The calculation of the electron tunneling current in a single barrier heterostructure involving electron spin was carried out on this research. The discussion begins with a comparison of the transmittance calculation method using Airy functions, exponential functions, and WKB approxima-tion with a matrix transfer calculation method as the benchmark. From the research that was conducted, it was found that the Airy method is the most effective method to be used in calculation of the transmittance in the case of square and trapezoidal potential models. The study was then followed by a spin-dependent transmittance calculation, the value of the transmittance in spin up and spin down state then compared. Results from the calculation showed that the value of the transmittance to energy is different for each spin state. The calculation of the value of transmittance <br /> toward the incident angle of electrons arrival to the barrier also conducted, the results showed that the transmittance value for both conditions is not symmetric to the incident angle of electrons arrival. Then calculation of spin polarization was also conducted, spin polarization value indicates the dominant state of the spin. Positive values represent the spin-up state is more dominant, and vice versa. The calculation shows that the incident angle of electrons arrival affects the spin polarization of electrons in the material, positive value of incident angle of electrons arrival resulted a positive polarization values, and vice versa. The spin-polarized transmittance <br /> value that was obtained then used to calculate the tunneling current density as a function of bias voltage. The result shows that current density value increased as the increasing of bias voltage. The result also shows that the width of the potential barrier inuence the value of breakthrough current density, the increasing of potential barrier width causes the value of tunneling current decline. Other than that, the result also shows that the <br /> highest value of the breakthrough current density obtained when electrons move perpendicular to the surface of the barrier.<p align="justify">