COMPARATIVE STUDY OF BETAVOLTAIC BATTERY PERFORMANCE BETWEEN PLANAR AND DEEP TRENCHES DESIGN BASED ON P-N JUNCTION SILICON USING Ni-63 AS BETA EMITTING SOURCE
The decay reaction of an unstable nuclide can be applied as the energy source for long-lasting micropower battery, such as a betavoltaic battery. The main issue of betavoltaic battery which have been reported annually is the low energy conversion efficiency, one is caused by the inefficient betavolt...
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id-itb.:244402017-09-27T14:41:05ZCOMPARATIVE STUDY OF BETAVOLTAIC BATTERY PERFORMANCE BETWEEN PLANAR AND DEEP TRENCHES DESIGN BASED ON P-N JUNCTION SILICON USING Ni-63 AS BETA EMITTING SOURCE RAHASTAMA (NIM: 20215057), SWASTYA Indonesia Theses INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/24440 The decay reaction of an unstable nuclide can be applied as the energy source for long-lasting micropower battery, such as a betavoltaic battery. The main issue of betavoltaic battery which have been reported annually is the low energy conversion efficiency, one is caused by the inefficient betavoltaic design against the utilization of radiation. By redesigning the basic planar model into deep trenches model, the utilization of beta particles to generate electron-hole pairs can be amplified. In this study, the simulation of betavoltaic battery performance using planar and deep trenches design based on p-n junction silicon coupled with Ni-63 beta source has been done. The interaction of beta particle and the energy deposition along the depth of penetration was simulated using Monte Carlo N-Partikel X (MCNPX). The calculation of battery performance was done by two different methods: by solving minority carrier diffusion equation with analytical derivation for 1-D planar problem and numerical approximation. The aim of this project is to have a comparison of betavoltaic performance using the planar design and the new deep trenches design. The calculation results from both methods were verified to validate the calculation methods. The numerical simulation was built in the Matlab code and the result matches with the analytical calculation. Subsequently, the calculation results from both methods were close to the experimental values from reference. Furthermore, the numerical method was applied to calculate the battery performace of deep trences design. Compared to planar design betavoltaic, applying the deep trenches design could increase the battery current up to 23,45%, voltage up to 5,05%, and both conversion efficiency and power up to 29,69%. This deep trenches design can be effectively used to reduce the number of source activity or to increase the total active region with a smaller geometry in betavoltaic battery. text |
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The decay reaction of an unstable nuclide can be applied as the energy source for long-lasting micropower battery, such as a betavoltaic battery. The main issue of betavoltaic battery which have been reported annually is the low energy conversion efficiency, one is caused by the inefficient betavoltaic design against the utilization of radiation. By redesigning the basic planar model into deep trenches model, the utilization of beta particles to generate electron-hole pairs can be amplified. In this study, the simulation of betavoltaic battery performance using planar and deep trenches design based on p-n junction silicon coupled with Ni-63 beta source has been done. The interaction of beta particle and the energy deposition along the depth of penetration was simulated using Monte Carlo N-Partikel X (MCNPX). The calculation of battery performance was done by two different methods: by solving minority carrier diffusion equation with analytical derivation for 1-D planar problem and numerical approximation. The aim of this project is to have a comparison of betavoltaic performance using the planar design and the new deep trenches design. The calculation results from both methods were verified to validate the calculation methods. The numerical simulation was built in the Matlab code and the result matches with the analytical calculation. Subsequently, the calculation results from both methods were close to the experimental values from reference. Furthermore, the numerical method was applied to calculate the battery performace of deep trences design. Compared to planar design betavoltaic, applying the deep trenches design could increase the battery current up to 23,45%, voltage up to 5,05%, and both conversion efficiency and power up to 29,69%. This deep trenches design can be effectively used to reduce the number of source activity or to increase the total active region with a smaller geometry in betavoltaic battery. |
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Theses |
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RAHASTAMA (NIM: 20215057), SWASTYA |
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RAHASTAMA (NIM: 20215057), SWASTYA COMPARATIVE STUDY OF BETAVOLTAIC BATTERY PERFORMANCE BETWEEN PLANAR AND DEEP TRENCHES DESIGN BASED ON P-N JUNCTION SILICON USING Ni-63 AS BETA EMITTING SOURCE |
author_facet |
RAHASTAMA (NIM: 20215057), SWASTYA |
author_sort |
RAHASTAMA (NIM: 20215057), SWASTYA |
title |
COMPARATIVE STUDY OF BETAVOLTAIC BATTERY PERFORMANCE BETWEEN PLANAR AND DEEP TRENCHES DESIGN BASED ON P-N JUNCTION SILICON USING Ni-63 AS BETA EMITTING SOURCE |
title_short |
COMPARATIVE STUDY OF BETAVOLTAIC BATTERY PERFORMANCE BETWEEN PLANAR AND DEEP TRENCHES DESIGN BASED ON P-N JUNCTION SILICON USING Ni-63 AS BETA EMITTING SOURCE |
title_full |
COMPARATIVE STUDY OF BETAVOLTAIC BATTERY PERFORMANCE BETWEEN PLANAR AND DEEP TRENCHES DESIGN BASED ON P-N JUNCTION SILICON USING Ni-63 AS BETA EMITTING SOURCE |
title_fullStr |
COMPARATIVE STUDY OF BETAVOLTAIC BATTERY PERFORMANCE BETWEEN PLANAR AND DEEP TRENCHES DESIGN BASED ON P-N JUNCTION SILICON USING Ni-63 AS BETA EMITTING SOURCE |
title_full_unstemmed |
COMPARATIVE STUDY OF BETAVOLTAIC BATTERY PERFORMANCE BETWEEN PLANAR AND DEEP TRENCHES DESIGN BASED ON P-N JUNCTION SILICON USING Ni-63 AS BETA EMITTING SOURCE |
title_sort |
comparative study of betavoltaic battery performance between planar and deep trenches design based on p-n junction silicon using ni-63 as beta emitting source |
url |
https://digilib.itb.ac.id/gdl/view/24440 |
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1821844670873862144 |