THE EFFECTS OF CONCENTRATION NaNO3 ON THE CHARACTERISTICS OF GRAPHENE OXIDE SYNTHESIZED BY MODIFIED HUMMERS METHOD
Graphene is two dimensional material like single layer graphite that has good conductivity and high order transparency to be used in electronic application. Today, research about defects in graphene is being observed. In obtaining that, it is better to use graphene oxide (GO) as a precursor to make...
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| Format: | Final Project |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/24658 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | Graphene is two dimensional material like single layer graphite that has good conductivity and high order transparency to be used in electronic application. Today, research about defects in graphene is being observed. In obtaining that, it is better to use graphene oxide (GO) as a precursor to make graphene. Natrium nitrat (NaNO3) as the first oxidizing agent has the role to increase carboxyl group so that sp3 bond rise in GO. In this study, we will find the optimum synthesis of modified Hummers method to find GO with highset interband layers dinstance so that we can assume GO as two dimensional material like graphene but still has many defects that makes GO has luminescece properties. In modified Hummers method Amonium Peroksodisulfat (APS) was used to switch KMnO4 as the second oxidizing agent. Beside that, consentration of NaNO3 was combined in five variants, there were 0 gram, 0.5 gram, 1 gram, 2 grams, and 4 grams. First step characterization we used Raman Spectrometer and obtained three main peaks, there are Graphite-band (IG), Defects-band (ID), and Graphene-band (IG). In determining the number of defects we anlalyzed ratio of intensity between D peak and G peak. Beside that, GO was characterized by photoluminescence spectroscopy to find transition type of GO in order to defects. Another characterization techniques was used is UV-Vis Spectroscopy. From these characterization techniques we find that the optimum concentration NaNO3 we can used to make GO with high defect and high interlayer distance is 1 gram with ID/IG about 0.81, emision energy of PL spectra is 2.21 eV, and its bandgap is about 3.56 eV. |
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