ANALYSIS OF DIELECTRIC FUNCTION IN MoS2-BASED MATERIAL GROWN BY DC UNBALANCED MAGNETRON SPUTTERING TECHNIQUE

• Main Author: NICO PUTRANO - Nim: 10213008, KANZIE
• Format: Final Project
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/28382
• Institution: Institut Teknologi Bandung

MoS2 is a transitional metal dichalcogenides (TMDs) which has a semiconducting property and 2-dimensional graphene-like structure. The 2-dimensional structure of atomically thin film MoS2 makes it a great potential to integrate with other 2-dimensional structure material to make a 2D hybrid heterostructure device. In previous research a single layer crystal MoS2 which was deposited with exfoliation technique shows a direct bandgap structure a very strong photoluminescence and a high current on/off ratio wich makes MoS2 a good potential to be used in novel electronic, sensor and optoelectronic device. Aplication in optoelectronic device demands knowledge of optical properties. The studies of the optical properties of MoS2 deposited with exfolation and CVD technique have been reported. However, the study of optical properties of MoS2 grown by sputtering technique is limited. In this work MoS2 thin film is grown using DC unbalanced magnetron sputtering technique. Then, the optical properties of the system which has been successfully grown will be studied. The result of this study found that the system that has been grown is Mo-S-O system which has different characteristics with MoS2.