MEKANISMA RESONANT TUNNELING DALAM DIODA 5-DOPED SINGLE BARRIER DENGAN SIMULASI NUMERIK

To analyze the resonant tunneling mechanism of the S-doped single barrier resonant tunneling diodes, the transmission spectra and I-V characteristics for the conduction band electrons are calculated. Numerical methods are used to solve Schroedinger and Poisson Equations simultaneously to calculate e...

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Main Author:	Mulyanti, Budi
Format:	Theses
Language:	Indonesia
Online Access:	https://digilib.itb.ac.id/gdl/view/2889
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Institution:	Institut Teknologi Bandung
Language:	Indonesia

id	id-itb.:2889
spelling	id-itb.:28892005-09-16T15:34:07ZMEKANISMA RESONANT TUNNELING DALAM DIODA 5-DOPED SINGLE BARRIER DENGAN SIMULASI NUMERIK Mulyanti, Budi Indonesia Theses INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/2889 To analyze the resonant tunneling mechanism of the S-doped single barrier resonant tunneling diodes, the transmission spectra and I-V characteristics for the conduction band electrons are calculated. Numerical methods are used to solve Schroedinger and Poisson Equations simultaneously to calculate energy band diagrams for different the width of barrier, 'external bias condition, peak doping concentration, band offset, and FWHM (Full-width at half maximum). Numerical simulations are also used to calculate the corresponding transmission spectra under various bias conditions. The calculated I-V characteristics for different peak doping concentration are presented. The influence of the FWHM on the I-V characteristics is also examined text
institution	Institut Teknologi Bandung
building	Institut Teknologi Bandung Library
continent	Asia
country	Indonesia Indonesia
content_provider	Institut Teknologi Bandung
collection	Digital ITB
language	Indonesia
description	To analyze the resonant tunneling mechanism of the S-doped single barrier resonant tunneling diodes, the transmission spectra and I-V characteristics for the conduction band electrons are calculated. Numerical methods are used to solve Schroedinger and Poisson Equations simultaneously to calculate energy band diagrams for different the width of barrier, 'external bias condition, peak doping concentration, band offset, and FWHM (Full-width at half maximum). Numerical simulations are also used to calculate the corresponding transmission spectra under various bias conditions. The calculated I-V characteristics for different peak doping concentration are presented. The influence of the FWHM on the I-V characteristics is also examined
format	Theses
author	Mulyanti, Budi
spellingShingle	Mulyanti, Budi MEKANISMA RESONANT TUNNELING DALAM DIODA 5-DOPED SINGLE BARRIER DENGAN SIMULASI NUMERIK
author_facet	Mulyanti, Budi
author_sort	Mulyanti, Budi
title	MEKANISMA RESONANT TUNNELING DALAM DIODA 5-DOPED SINGLE BARRIER DENGAN SIMULASI NUMERIK
title_short	MEKANISMA RESONANT TUNNELING DALAM DIODA 5-DOPED SINGLE BARRIER DENGAN SIMULASI NUMERIK
title_full	MEKANISMA RESONANT TUNNELING DALAM DIODA 5-DOPED SINGLE BARRIER DENGAN SIMULASI NUMERIK
title_fullStr	MEKANISMA RESONANT TUNNELING DALAM DIODA 5-DOPED SINGLE BARRIER DENGAN SIMULASI NUMERIK
title_full_unstemmed	MEKANISMA RESONANT TUNNELING DALAM DIODA 5-DOPED SINGLE BARRIER DENGAN SIMULASI NUMERIK
title_sort	mekanisma resonant tunneling dalam dioda 5-doped single barrier dengan simulasi numerik
url	https://digilib.itb.ac.id/gdl/view/2889
_version_	1820663284022378496

MEKANISMA RESONANT TUNNELING DALAM DIODA 5-DOPED SINGLE BARRIER DENGAN SIMULASI NUMERIK

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