OPTICAL PROPERTIES ANALYSIS OF SN:ZNO GROWN BY DC-UNBALANCED MAGNETRON SPUTTERING

• Main Author: NUGRAHA PRATAMA (NIM : 10214092), SENDI
• Format: Final Project
• Language: Indonesia
• Subjects: Fisika
• Online Access: https://digilib.itb.ac.id/gdl/view/30871
• Institution: Institut Teknologi Bandung

In this research, we study the optical properties of Sn:ZnO. As a comparison, ZnO from our previous study will be used to compare pure ZnO and Sn:ZnO. Our research focus is to study about the effect of Sn dopant in the ZnO system. The deposition has been performed by DC-unbalanced magnetron sputtering technique. We prepared 3 samples with the variation of growth temperature (room temperature, 150°C, and 250°C). Argon gas is used during the deposition process. EDX result confirms that Sn:ZnO samples are grown succesfully with average dopant concentration of 2 at%. The Sn dopant give effect to optical properties of ZnO materials. The dielectric constant was extracted from ? and ? spectra. Based on the dielectric function spectra, there is blueshift for ?1 due to incorporation of Sn atom in ZnO system. From UV-Vis spectroscopy, we obtain that Sn doping can increase transmittance between 2% until more than 10%. Optical conductivity can be obtained from ?2. It reveals that Sn dopant increase the conductivity especially in the region of more than 4 eV. The modification of optical properties through Sn dopant is important to improve the functionality of ZnO especially for optoelectronic applications.