POLYMERIZATION PROCESS OF SELF-ASSEMBLED MONOLAYERS (SAMs) OF 1,1â-BIPHENYL-4-THIOL (BPT) ON COPPER AS INTERMEDIATE STEP IN GRAPHENE PRODUCTION
Graphene is a two-dimensional (2D) array of carbon with a honeycomb structure that consists of two interpenetrating triangular sub-lattices. One-atom thick graphene is known to be the thinnest material which has a good both electrical and thermal conductivity as well as high tensile strength...
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Format: | Theses |
Language: | Indonesia |
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Online Access: | https://digilib.itb.ac.id/gdl/view/34316 |
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Institution: | Institut Teknologi Bandung |
Language: | Indonesia |
Summary: | Graphene is a two-dimensional (2D) array of carbon with a honeycomb structure that consists of two interpenetrating triangular sub-lattices. One-atom thick graphene is known to be the thinnest material which has a good both electrical and thermal conductivity as well as high tensile strength and stiffness. Several methods have been developed to synthesize graphene such as mechanical exfoliation, chemical exfoliation of graphite, thermal decomposition of silicon carbide and chemical vapour deposition (CVD). However, getting a good quality of graphene for mass production remains a challenge. Some methods are not suitable for up-scaling process for industrial use. We are working on graphene production from self-assembled monolayers (SAMs) of 1,1?-biphenyl-4-thiol (BPT) which are first polymerized and then heated to generate the 2D allotrope of carbon. The SAM contains a well-defined amount of carbon and is expected to cover the substrate surface uniformly, hence avoiding defects due to multiple nucleation sites. Contact angle measurements for electropolished copper and BPT
SAMs on electropolished copper are 39.6o and 96.4o respectively, confirming that BPT molecules have successfully assembled on the substrate. In XPS analysis, the pristine sample show a C1s peak at 284.6 eV binding energy due to aromatic carbon and a second component at 285.6 eV for carbon that bind to sulfur. The C/S ratio from the best sample is 12.01 and the high intensity of the S2p peak found at 162.9 eV is due to sulfur that binds to copper. The main C1s peaks of the annealed samples show C-C bonding and C-O-C bonding at 284.6 eV and 285.3 eV respectively, other peaks at higher binding energy are Carbon-Oxygen bonding. In addition, after the annealing process there is no peak of sulfur
confirming that sulfur has completely desorbed from sample.
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