DENSITY FUNCTIONAL THEORY STUDY : ELECTRONIC STRUCTURE CALCULATIONS OF RARE EARTH ION IN GALLIUM NITRIDE
Gallium nitride (GaN) is a wide-band gap (Eg=3.4eV) semiconductor. Rare Earth (RE) in GaN have attracted interest due to their potential applications in optoelectronic devices. We carry out the electronic structure calculations for RE:GaN within based on density functional theory (DFT) in wurtzit...
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| Format: | Theses |
| Language: | Indonesia |
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| Online Access: | https://digilib.itb.ac.id/gdl/view/37096 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
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