CHARACTERIZATION THE ELECTRICAL AND OPTICAL PROPERTIES OF ZnO AND Fe:ZnO GROWED USING DC-UNBALANCED MAGNETRON

• Main Author: Charvia, Louis
• Format: Final Project
• Language: Indonesia
• Subjects: Fisika
• Online Access: https://digilib.itb.ac.id/gdl/view/37875
• Institution: Institut Teknologi Bandung

Zinc oxide (ZnO) is very suitable for electronic and UV or photonic applications because it has unique physical and chemical properties, such as high chemical stability, high electrochemical coupling coefficients, wide range of radiation absorption, and high photostability. ZnO material with four variations of Fe (Iron) doping has been grown on silicon and quartz substrates using DCUnbalanced Magnetron Sputtering. Then in order to find out the effects of doping, X-ray diffraction (XRD) characterization, scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), IV, UV-Visible spectroscopy (UV-Vis) and spectroscopic ellipsometry (SE) were performed. I-V measurements were carried out using Ag metal as metal contact. Each sample variation was measured for metal-semiconductor-metal (MSM) configurations. The variations in dark and light conditions are applied when the measurement takes place, this is done in order to obtain the material responsiveness curve to light. In addition, UV-Vis measurements were carried out using UV radiation and visible radiation. The use of these radiation in order to obtain the transmittance, reflectance, and absorbance curves of a material. In this research, variations in doping on ZnO can be used to increase the amount of load carrier and conductivity of the material layer. However, the efficiency of a dopant also depends on electronegativity, ionic dopant radius, and ionic zinc radius. The results showed that Fe:ZnO material with optimum variation of Fe doping concentration had better electrical properties, optical properties, and crystallinity than pure ZnO material.