Synthesis and Fabrication of p-n Polyaniline/Silicon type Heterojunction

• Main Author: Citra Oktora, Anita
• Format: Final Project
• Language: Indonesia
• Subjects: Kimia
• Online Access: https://digilib.itb.ac.id/gdl/view/41324
• Institution: Institut Teknologi Bandung

The use of electronics device has been widely known as useful function in daily life. One of the essential component part in an electronics device is diode that conducting electric current to one direction and hinder current from opposite direction (rectification function). A diode has some types, one of them is p-n junction that is formed by semiconductor materials. A p- type semiconductor having main charge carrier as hole whereas n-type gives main charge carrier as electron. Silicon is one of the commonly used semiconductor because can be made into p-type or n-type semiconductor through the doping process. In progress p-n junction diode can be designed from a combination of inorganic material (silicon) and organic material or commonly known as hybrid type. The benefits of using organic materials are easily synthesized, cheap and having optical properties that can be setted easily. Conducting polymer like polyaniline (PANI) is a popular compound in making p-n junction. PANI has a good stability in the environment, easily synthesized and having various level oxidation numbers. The most stable basic shape of bases PANI is PANI EB (emeraldine base), while doping PANI EB with acid such as HCl can change the form of PANI EB into PANI ES (emeraldine salt). The existence of polaron lattice on the structur of PANI ES will creat charge carrier hole that allowing PANI become p-type. In this research, will be made p-n heterojuncton (hybrid) that connecting inorganic and organic materials between conducting polymer polyaniline and silicon doped phosphorus atom in the field <100>. The synthesis of PANI is done by oxidation monomer aniline in the chemical reaction and characterized using FT-IR and raman spectroscopy. FT-IR spectroscopy indicate polaron lettice (C-N+) of PANI ES in the wave number of 1230 cm-1 while for raman spectroscopy showing polaron lettice of PANI ES in the raman shift of 1189 cm-1. The fabrication of p-n heterojunction is made by varying the electrode using Aluminum(Al) and silver (Ag) and variation of dopant HCl in the range 0.1 – 0.5 M. The characteristic of I-V curve is investgated by Keithley 2400 instrument to produce a diode parameters such as the turn on voltage is 0.8 volt, the rectification rasio (?) is 7.74 at ±3 V, the ideality factor (?) is 117 and the barrier height (?B) is 0.220 eV for junction using Al electrode and the turn on voltage is 1.4 volt, the rectification rasio is 11.05 at ±3 V, the ideality factor is 87.41 and the barrier height is 0.218 eV for junction using Ag electrode.