SYNTHESIS OF ZINC-TIN-OXIDE (ZTO) USING SOL-GEL METHOD AS A BUFFER LAYER FOR CZTS THIN FILM SOLAR CELLS

• Main Author: M. Yusuf Yuda Prawira, TB.
• Format: Theses
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/43508
• Institution: Institut Teknologi Bandung

CZTS solar cell is one of new emerging technology solar cell because using earth abundance and nontoxic material. The CZTS consist of copper (Cu), zinc (Zn), tin (Sn), and sulfur (S). there are two main layers of CZTS solar cell: absorber layer as p-type semiconductor and buffer layer as n-type semiconductor. The absorber layer use CZTS and the buffer layer usually use CdS. Cadmium is hazardous and toxic element. CZTS solar cell needs alternatives material on their buffer layer. In this Study, ZTO (Zinc-Tin-Oxide) was used as an alternative layer for CZTS solar cell buffer layer to replace CdS. The optical and electrical properties of ZTO observed by varying the ratio of Zn and Sn into four variation: 3:7, 1:1, 7:3, and 1:19. All variation of solution processed ZTO have no significant difference of band gap between 3.7 – 3.9 eV and it has similar value with ZTO which synthesized by physical deposition. Then in XRD test it was found that ZTO is an amorphous compound with broad peak at angle 33?. SEM characterization showed that the concentration of Zn and Sn on ZTO affected the porosity on the compound. Zn:Sn ratio in ZTO exhibited different semiconductor types. The p-type semiconductor were produced at 3:7, 1:1, 7:3, and 1:19 ratio of Zn : Sn while ntype semiconductor was at 1:19 ratio of Zn : Sn. The resulting p-n junction of CZTS and ZTO showed diode effect in I-V curve so that the ZTO (Zn : Sn = 1 : 19) is favourable for buffer layer for CZTS solar cells