OPTIMASI STRUKTUR SEL SURYA TANDEM GAAS/GA SB SAMBUNGAN P-N BEREFISIENSI TINGGI

• Main Author: Suhandi, Andi
• Format: Theses
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/4641
• Institution: Institut Teknologi Bandung

<b>Abstract:<p align=\"justify\"> <br /> <br /> <br /> Solar cells parameters of p-n junction structure of GaAs and GaSb were calculated. The calculated parameters include; short circuit current (ISC), open circuit voltage (V0C), and conversion efficiency (r)) as a function of layer thickness and concentration of doping impurity. The solar cells structure which have optimum conversion efficiency for both cells were found to be 1,2 gm and 3,5 gm of p-type and n-type layer thickness, 5x1018 cm-3 and 5x1017 cm-3 of p and n dopant concentration, repectively. These structures give a conversion efficiency of 19,87 % and 6,80 % for GaAs and GaSb solar cells, respectively, under AM1,5 illumination.<b>Abstrak:<p align=\"justify\"> <br /> <br /> The effect of BSF layer whiches placed between n-type layer and back ohmik contact was also investigated. It is revealed that the BSF layer decrease the recombination rate of back surface and dark current density of a back layer which in then enhance the conversion efficiency of solar cells.