THERMOELECTRIC PERFORMANCE AND STRUCTURE STUDIES OF SNSE VIA NON-VACUUM SOLID STATE REACTION

• Main Author: Fauzia Gustiani, Vivi
• Format: Theses
• Language: Indonesia
• Subjects: Fisika
• Online Access: https://digilib.itb.ac.id/gdl/view/46536
• Institution: Institut Teknologi Bandung

Thermoelectric device (TE) is the device that enables direct conversion heat energy to electrical energy and vice versa which makes TE as an environmental friendly alternative energy conversion device. Single crystal SnSe receives high attention as thermoelectric material to its high figure of merits (ZT) of 2.6 at 923 K. Generally, polycrystal SnSe has a low ZT (ZT < 1). Most of polycrystal SnSe were synthesized by solid-state reaction at high temperature (~1222 K) and vacuum condition. Moreover synthesis SnSe at low temperature through chemical route still hard to do. This study tries to explore the simpler route to synthesize SnSe with lower temperature (473 K – 973 K) in non-vacuum condition. Singe phase SnSe was obtained through melting temperature between 573 K and 973 K with orthorhombic structure and the lattice parameter are a~11.50 Å, b~4.15 Å, and c~4.45 Å. These values are compatible with reported values which synthesized at high temperature. The prominent Seebeck coefficient and electrical conductivity were showed the rising of power factor as temperature increases although still lower than the reported values probably due to the low density of the sample. Besides that, the decreasing of Seebeck coefficient and electrical conductivity was observed at the repeated heating cycle. This condition indicates that the repeated heating cycle in nonvacuum condition decreases those two parameters due to the presence of another phase including those that contain oxygen in the porous