STUDY OF ELECTRONIC AND MAGNETIC PROPERTIES OF (LAO)MNSB AND (LAO)MNP USING DENSITY FUNCTIONAL METHOD
Semiconductor technology development in utilizing material transfer speeds and operating frequencies shows stagnation. The reduction in the size of the microprocessor is increasingly not supproted by semiconductor materials. Continuation of the development of microprocessor is to use spintronic mate...
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| Format: | Final Project |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/49150 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | Semiconductor technology development in utilizing material transfer speeds and operating frequencies shows stagnation. The reduction in the size of the microprocessor is increasingly not supproted by semiconductor materials. Continuation of the development of microprocessor is to use spintronic material that utilizes the spin current of electrons. (LaO)MnSb dan (LaO)MnP as antiferromagnetic semiconductor materials as the host material can be an option. Ab-initio calculations based on DFT to study the electronic and magnetic properties of pure (LaO)MnSb and (LaO)MnP computationally. Calculation conducted produced the same parameter as in experiment by using Hubbard Correction U = 4 eV and U = 8 eV and give us error 0.769 % and 16.29 % for (LaO)MnP and (LaO)MnSb respectively according to experiment reference[42]. Mn 3d orbital is the dominant character in electron transfer prosess and hibridization of p-d in the upper valence band near Fermi region in (LaO)MnP and (LaO)MnSb. The calculation too showed us the p-type semiconductor of (LaO)MnP. |
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