#TITLE_ALTERNATIVE#

• Main Author: Ayu Ketut Umiati (20298018), Ngurah
• Format: Theses
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/6535
• Institution: Institut Teknologi Bandung

</i><b>Abstract: </b><p align="justify"><i> align="justify"><i><br />Ferroelectrics material have been used for many purposes e.g. as microactuator (from piezoelectric properties), as capacitor for DRAM (Dynamic Random Access Memory), and for infra red sensor (from pyroelectric properties). PbZr_0,625Ti_0,3750₃ (PZT) ferroelectrics materials, that has piezoelectricity and pyroelectricity properties. In this experiment, the effects of annealing, temperature, and plasma power of PbZr_)0,625Ti_0,3750₃ (PZT) thin films, deposited by dc unbalanced magnetron sputtering method have been studied.<br /><p align="justify"><i>Thin films ferroelectrics of PbZr_)0,625Ti_0,3750₃ (PZT) have been grown on Si(100) at temperature 550°C-700° C with variation plasma power at 50 - 90 watt using annealing and non annealing condition. Before carried out the deposition, the chamber is evacuated to the base pressure of 0,045 torn. The deposition is carried out using Ar and 02 ratio of 50 : 10, and reactor pressure of 1,3 torr. The sample was annealed at 650°C with reactor pressure of 0,58 torr.<br /><p align="justify"><i>The effect of annealing, temperature, and plasma power have been studied and shows that the annealing, higher temperature and higher plasma power can improve the films crystalinity as analyzed from the XRD patterns. These correspond with morphology improvement which is compact, more homogen, and have certain pattern as shown by SEM of sample. The optimized parameter deposition of PbZr_)0,625Ti_0,3750₃ thin film on Si(100) substrate by dc unbalanced magnetron sputtering at substrate temperature of 625°C and plasma power of 62,8750 watt.