THE EFFECT OF P-TYPE DOPING ON LITHIUM DIFFUSIVITY PROPERTY ON SILICON NANOWIRE

• Main Author: Hendra Darma Sastrawan, Kadek
• Format: Final Project
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/68492
• Institution: Institut Teknologi Bandung

Lithium-ion batteries (LIB) revolutionized the energy sector and are now taking their applications to a higher level. However, the current commercial battery based on graphite (C) is still a long way off for larger applications. One of the potential materials is silicon (Si) with a theoretical capacity of 4200 mAh.g-1. The problem found in Si is the occurrence of volume expansion in the alloying process which causes degradation of the Si structure. One solution to the Si stability problem is to engineer the bulk structure into silicon nanowire (SiNW). Although SiNW can overcome the problem of mechanical stability, it is necessary to increase its ionic conductivity. In this study, the effect of adding p-type doping on the diffusivity property of lithium in SiNW will be reviewed. This final project research was conducted by reviewing the doping of boron (B), aluminium (Al), gallium (Ga), and indium (In) on the diffusion activation energy of lithium. In the study, 3 sites were reviewed, namely core (c), intermediate (i), and surface (s) sites. Based on this study, it was found that the addition of p-type doping decreased the activation energy of diffusion by 0.04 – 0.33 eV with the best improvement was obtained with doping at site c. The largest Li diffusivity was obtained at doping B at site i (5.97 x 10-7 cm2/s), but the optimum increase was obtained at doping at site c for B, Al, Ga, and In. Based on this research, it is recommended Al and Ga atoms as p-type doping considering that both Al and Ga are theoretically easy to synthesize and have good diffusivity performance.