DESIGN AND CHARACTERIZATION OFBROADBAND SWITCH MODE CLASS E RADIO FREQUENCY POWER AMPLIFIER AT 3.4-3.6 GHZ BAND

• Main Author: Hamid Al-Azhari, Abdurrakhman
• Format: Theses
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/70021
• Institution: Institut Teknologi Bandung

The growing telecommunications system has increased the use of electronic devices connected to the internet. 5G technology, which is increasingly developing, has begun to be standardized in Indonesia. Therefore, the development of a high- efficiency radio signal power amplifier in the 5G frequency band is very important. Class E power amplifier is considered as one of the most efficient amplifier class. In this research, a class E power amplifier was designed in the 3.4-3.6 GHz frequency band using the GaN HEMT CGH40010F as a switch in the amplifier circuit. Adjustment of the conduction angle is carried out so that the operation of the class E power amplifier can run within the transistor's safe working limits. Optimum impedance is obtained by using load-pull iteration. The low-pass impedance matching circuit is designed using a transmission line based on the load and source optimum impedance. The PCB of the class E power amplifier module is fabricated based on the simulation results and design using ADS. The ADS simulation results show that the class E radio signal power amplifier module achieves an output power of 34-35 dBm and a PAE value of 39.4-51.4% at 3.4-3.6 GHz. The measurement results of the class E radio signal power amplifier module showed a decrease in gain by 3.72 dB and a decrease in the PAE by 32.61%. The decrease in the value of the output power in the measurement results is due to the difference in parameter values between the physical transistor and the transistor simulation in ADS, especially in the threshold voltage (Vth) and transistor transconductance.