SIMULASI EMISI SPONTAN PADA SILIKON QUANTUM DOT UNTUK APLIKASI LIGHT EMITTING DEVICE
Unique properties of semiconductor in quantum structure have been gaining interest of researcher. Spontaneous emission power on silicon nanocrystal is simulated in this Final Project. The Silicon nanocrystal is in a form of a quantum dot surrounded by silicon dioxide. To calculate spontaneous emi...
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| Format: | Final Project |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/72992 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | Unique properties of semiconductor in quantum structure have been gaining
interest of researcher. Spontaneous emission power on silicon nanocrystal is
simulated in this Final Project. The Silicon nanocrystal is in a form of a quantum dot
surrounded by silicon dioxide. To calculate spontaneous emission power, the energy
level in quantum dot must first be determined. In this step we use assumption that
potential barrier surrounding the quantum dot is infinite. This calculation produces
216 energy levels. Not all of these energy levels are inside the quantum dot. The
energy level with energy higher than the potential barrier of Si/SiO2 will not be
included in the further calculations. The number of energy levels increases as the
quantum dot dimension made larger, but with lower first level of energy. Wave
function of each energy level is determined then. Photoluminescence process is used
to generate photon from quantum dot. Laser is then introduced as the photon source
in photoluminescence process. Assuming photon as disturbance, perturbation theory
is calculated. Using ordinary differential equation (ODE) function of Matlab,
transition probability is known. Laser type and quantum dot dimension affected on
transition probability. Spontaneous emission in a 2x2x2 nm3 quantum dot with CO2
laser is P = 1,385x10-32 Watt. |
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