TRANSMITANSI DAN ARUS TEROBOSAN ELEKTRON DI DALAM METAL-OKSIDA-SEMIKONDUKTOR (MOS) SAMBUNGAN HETERO MATERIAL ANISOTROPIK
An analytical expression for evaluating the transmission coefficient and tunnel current of an electron in metal-oxide-semiconductor hetero junction anisotropic material has been derived. The Si(100)/SiO2/Si(100) heterostructure was used to examine the analytic expression. Airy function numerical...
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| Format: | Final Project |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/74356 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |