STUDY AND CHARACTERIZATION OF 2D MATERIAL MOS2:NB GROWN BY DC UNBALANCED MAGNETRON SPUTTERING METHOD

• Main Author: Nathanael Huangtama, Valensius
• Format: Final Project
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/77559
• Institution: Institut Teknologi Bandung

MoS 2 a twn-dimensional material that falls tinder the categor) of Transition Metal Dichalcogenides (TMDs). The growth of MoS , which has n bandgap of 1.2 — 1.8 eV , can he modified by doping it oil/i n transition metal like Nb, which can altrr its j›roperties and structure. This resenrcli aims to studv the changes in the j›roperties and structtire of MoSz resulting from Nb doj›ing using anal y‘sis techniques .such as Scanning Electron Microscop y (SEM ) and Energ Di.spersive X-Ray Sj›ectroscopy (EDS), X-rap Powder Diffraction (XRD), UV-Vis Spectroscop y, and I-V Characterization. The de edition technique einplnyeJ in t/tie resenrch is DC unbalanced mrignetron sj uttering, and the .sam ales are subjected to various temperature anneciling processes. The characterization results of Nb- doped MoS2 will be annal yz,ed nnd coitipared with the characterization results of pure MoS . Doping of Nb in MnS2 materinl has been successfully grown, as indicated hy SEM-EDX test results. UV-Vis characteriz,cition shows that Nb do rug in MoS: can decrease its energ y hnndgap from 1.172 eV to 1.161 eV. The I-V characteriz,ation shows that Nb doping in MoS can increase the current densit y, and with the cinnealing process on MoSz:Nb, there is cn increase in current densit .