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ZnO is one of II-VI group semiconductor material with the wide band gap and large exciton binding energy at room temperature. Furthermore, ZnO has developed as a promising for the new electronic and photonic devices generation. In this study, ZnO nanorods were growth using chemical solution depositi...

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Bibliographic Details
Main Author: MARYANTI (NIM 20506014), EVI
Format: Theses
Language:Indonesia
Online Access:https://digilib.itb.ac.id/gdl/view/7846
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Institution: Institut Teknologi Bandung
Language: Indonesia
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Summary:ZnO is one of II-VI group semiconductor material with the wide band gap and large exciton binding energy at room temperature. Furthermore, ZnO has developed as a promising for the new electronic and photonic devices generation. In this study, ZnO nanorods were growth using chemical solution deposition method under external electrical field at various precursor concentrations with temperature of 90 degrees C. We found that the ZnO growths on ITO substrate were affected by electrodes configuration through ITO surfaces. The observed XRD pattern and SEM images showed that the concentrations of precursor solution as well as electrodes configuration affect the homogeneity, crystal size and orientation of ZnO nanorods. The highest homogeneity of size and growth orientation (c-axis) could be obtained when precursor concentration is 100 mM, with configuration which positive electrode faced on ITO surfaces and deposition time of 8 hours. The photoluminescence spectra shows some sharp peak at 360 and 381 nm were increasing when an external electrical field direction of the electric field goes onto the ITO surfaces. The increasing of these peaks which identified as transition of exciton state in ZnO indicated that ZnO nanorods have a good crystalline phase and optical properties.