MODIFICATION OF NANOSTRUCTURE IN CARBON-DOPED ZNO: ELECTRICAL AND OPTICAL PROPERTIES SYNTHESIZED VIA SPUTTERING AND PYROLYSIS OF ZN-MOF DERIVATIVES

Zinc oxide (ZnO) is a semiconductor with a wide band gap of 3.33-3.37 eV and exceptional optical properties within the UV region. Introducing carbon doping to ZnO has the potential to reduce the band gap energy, resulting in broader optical absorption and thus serving as an alternative to enhance...

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Bibliographic Details
Main Author: Novi Hendri, Yasni
Format: Dissertations
Language:Indonesia
Online Access:https://digilib.itb.ac.id/gdl/view/79513
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Institution: Institut Teknologi Bandung
Language: Indonesia