AB INITIO STUDY ON ELECTRONIC STRUCTURE, OPTICAL AND TRANSPORT PROPERTIES OF X2OBA4 (X = SB, BI) ANTI RUDDLESDEN-POPPER COMPOUND WITH FP-LAPW METHOD
Layered materials has been thoroughly studied for optoelectronic, ferroelectric, spintronic, and thermoelectric materials. One of the newly found structure of such family is anti Ruddlesden-Popper structure which consists of anti-perovskite and rocksalt-like layer. These research focus on ab i...
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Format: | Final Project |
Language: | Indonesia |
Subjects: | |
Online Access: | https://digilib.itb.ac.id/gdl/view/83520 |
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Institution: | Institut Teknologi Bandung |
Language: | Indonesia |
Summary: | Layered materials has been thoroughly studied for optoelectronic, ferroelectric,
spintronic, and thermoelectric materials. One of the newly found structure of such
family is anti Ruddlesden-Popper structure which consists of anti-perovskite and
rocksalt-like layer. These research focus on ab initio study of X2OBa4 (X = Sb. Bi)
anti Ruddlesden-Popper series with FP-LAPW method. There is one possible
structure for Sb2OBa4 and three possible structures for Bi2OBa4 with different O
configurations. These research aim to the study electronic structure, optical
properties, transport properties, and its correlation to O position shift. Optical
properties are calculated with independent particle approximation using Kubo
Greenwood equation. Transport properties are calculated with constant relaxation
time approximation using semiclassical Boltzmann transport equation. Electronic
structure calculation show medium-gap semiconductor and Eg values within 0,59 –
1,15 eV range. Position shift affects Eg by changing orbital overlap of O. Optical
and transport properties are then calculated with modified Becke-Johnson potential
to describe electronic structure more accurately. Optical properties calculation
shows static dielectric constants within 7,0 – 9,5 range and strong absorption within
5×105 – 1,2×106 cm-1 in UV region. Position shift creates additional polarization
and change the value of static dielectric constants in the z-direction. Transport
properties calculation shows high electronic figure-of-merit (ZTel ? 40) at low
temperature (T < 600 K) for dopant concentration within 1017 – 5×1018 cm-3.
Position shift creates flat bands in valence and conduction band which increases
Seebeck coefficient (S > 750 ?V/K). Accounting for minimum lattice thermal
conductivity, theoretical figure-of-merit decreased within 0,37 – 1,18 with its
maximum at medium temperature (650 – 850 K). These properties demonstrate
potensial application as UV absorbent material and low temperature thermoelectric
material by thermal conductivity optimization. |
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