#TITLE_ALTERNATIVE#

• Main Author: HAMZAH FAUZI (NIM 10204052), MOHAMMAD
• Format: Final Project
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/8645
• Institution: Institut Teknologi Bandung

Electronic charged state simulation on individual Si based quantum dot has been done succesfully in the frame work of Density Functional Theory on the basis of Local Density Approximation based on the formulation was proposed by Slater-Vosko-Wilk-Nusair. We have simulated 2D circular quantum dot model with parabolic confinement. A detailed review of electron behaviour in quantum structures which is emphasized on its corresponding wave function and density of state and also transport characteristics in quantum dot are given. For an isolated individual Si quantum dot, the simulation results confirm that a uniform surface potential distribution is observed before electrons/holes injection. After electrons/holes injection into the dot, the surface potential change is observed. If two or more electrons/holes are injected into the dot, the maximum surface potential change appears near the peripheral region of the dot in contrast to the single electron/hole injection. It is due to charge interaction in term of Coulomb repulsion. For an isolated individual hetero-structures Si/Ge/Si quantum dot, the simulation results show the interesting features of surface potential distribution profile. The maximum surface potential change which is closely related with the highest peak of probability density of electron/hole appears in Ge core after hole injection, on contrary, after electron injection, the surface potential change is much higher appears in Si clad.