THE EFFECT OF N-I-P AND P-I-N LAYER ARCHITECTURE ON THE PERFORMANCE OF PEROVSKITE SOLAR CELL

• Main Author: Akbar Untoro, Adrian
• Format: Theses
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/86799
• Institution: Institut Teknologi Bandung

This study explore the impact of NIP and PIN architectures on the performance of FASnI?-based perovskite solar cells (PSCs) through simulations using the SCAPS-1D software. FASnI? is a promising material for PSCs due to its suitable bandgap, better thermal stability, and lower toxicity compared to Pb-based perovskites. The optimization of the NIP structure involves variations in donor density and the thickness of the FASnI? layer. A donor density in the form of a shallow density acceptor of 10¹? cm?³ leads to optimal performance improvement. Comparisons between NIP and PIN configurations show that although the NIP architecture outperforms PIN with Spiro-OMeTAD as hotel transport layer (HTL) material, the choice of HTL significantly affects the efficiency of the PIN architecture. PTAA is identified as the best HTL for the PIN structure, offering higher efficiency. Additionally, the study also investigates the optimization of the capture cross-section value to 10?¹?, resulting in maximum solar cell performance for all HTL material options. The efficiencies of solar cells with HTL materials PTAA, PEDOT:PSS, and Spiro-OMeTAD are 22.54%, 16.78%, and 4.58%, respectively, with Au electrodes. Furthermore, variations in the use of electrodes such as Ag and Cu can also enhance performance, particularly related to PCE and Jsc. Keywords: perovskite solar cells, FASnI?, NIP architecture, PIN architecture, hole transport layer, SCAPS-1D.