Simulation of Spontaneous Emission on Silicon Quantum Dot for Light Emitting Device Application

• Main Author: YULIANTO (NIM 10204011), AKHMAD
• Format: Final Project
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/9858
• Institution: Institut Teknologi Bandung

nique properties of semiconductor in quantum structure have been gaining interest of researcher. Spontaneous emission power on silicon nanocrystal is simulated in this Final Project. The Silicon nanocrystal is in a form of a quantum dot surrounded by silicon dioxide. To calculate spontaneous emission power, the energy level in quantum dot must first be determined. In this step we use assumption that potential barrier surrounding the quantum dot is infinite. This calculation produces 216 energy levels. Not all of these energy levels are inside the quantum dot. The energy level with energy higher than the potential barrier of Si/SiO2 will not be included in the further calculations. The number of energy levels increases as the quantum dot dimension made larger, but with lower first level of energy. Wave function of each energy level is determined then. Photoluminescence process is used to generate photon from quantum dot. Laser is then introduced as the photon source in photoluminescence process. Assuming photon as disturbance, perturbation theory is calculated. Using ordinary differential equation (ODE) function in Matlab, transition probability is known. Laser type and quantum dot dimension affected on transition probability. Spontaneous emission in a 2x2x2 nm3 quantum dot with CO2 laser is P = 1,385x10)-32) Watt. <br />