CONDUCTIVITY OF METAL OXIDE SEMICONDUCTOR (MOS) THIN FILMS DUE TO GAS ADSORPTION PROCESS BY USING POINT DEFECT - AND DIFFUSION THEORIES

• المؤلفون الرئيسيون: , Muhamad Darwis Umar, , , Kamsul Abraha
• التنسيق: مقال NonPeerReviewed
• منشور في: [Yogyakarta] : Fakultas MIPA Universitas Gadjah Mada 2007
• الوصول للمادة أونلاين: https://repository.ugm.ac.id/93848/; http://repository.ugm.ac.id/digitasi/index.php?module=cari_hasil_full&idbuku=1645

<p>In this work we study the effect of transport mechanism of charge carriers on the conductivity of metal oxide semiconductor (MaS) thin films due to gas adsorption within the framework of diffusion theory of point defect which uses the concept of small polarons and polarons as charge carrier...