High linearity silicon carbide detectors for medical applications
Silicon carbide is well known as a radiation hard semiconductor, that has been demonstrated in a range of detector structures for deployment in application where the ability to tolerate high radiation dose is imperative. This includes applications in space and nuclear environments, where the abil...
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| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2016
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| Subjects: | |
| Online Access: | http://eprints.unisza.edu.my/568/1/FH03-FSK-18-18313.pdf http://eprints.unisza.edu.my/568/ |
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| Institution: | Universiti Sultan Zainal Abidin |
| Language: | English |
| Summary: | Silicon carbide is well known as a radiation hard
semiconductor, that has been demonstrated in a range of detector
structures for deployment in application where the ability to
tolerate high radiation dose is imperative. This includes applications in space and nuclear environments, where the ability
to detect highly energetic radiation is important. In contrast,
medical treatment uses a range of radiation dose rates and
energies and here we investigate the response and linearity of a
highly radiation tolerant detector fabricated using silicon carbide
to dose rates in the range of 0.185mGy.min−1. This dose rate
is typical of those used for medical imaging purposes, rather
than radiotherapy treatment. The data show that the generated
current originates within the depletion region of the detector and
that the response is linearly dependent on the volume of the space
charge region. The realization of a vertical detector structure,
coupled with the high quality of epitaxial layers, has resulted in
a linearity and sensitivity of the detector that are significantly
higher than those published previously for moderate dose rate
testing. |
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