Investigation of a 3 nm Strained Fin Field-Effect Transistor (FinFET)

• Main Author: Tan, Pei Xin
• Format: Final Year Project / Dissertation / Thesis
• Published: 2023
• Subjects: T Technology (General); TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utar.edu.my/5960/1/Tan_Pei_Xin_21AGM06713.pdf; http://eprints.utar.edu.my/5960/
• Institution: Universiti Tunku Abdul Rahman

Fin Field-Effect Transistor (FinFET) device is qualified for its low-power operation capability at which the performance can be improved with further scaling. However, critical scaling towards 10nm of FinFET leads to a series of issues such as drain-induced barrier lowering (DIBL), threshold voltage...