Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers

Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers

Magnetic properties resulting from localized spins associated with antisite arsenic ions AsGa+ in Be-doped low-temperature-grown GaAs (LT-GaAs) layers were studied by measuring the magnetization of lift-off samples. With fast cooling, the magnetization of samples at 1.8 K becomes significantly lower...

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Bibliographic Details
Main Authors: Mohamed, Mohd Ambri, Tien Lam, Pham, Bae, K. W., Otsuka, Nobuo
Format: Article
Language:English
Published: American Institute of Physics Inc. 2011
Subjects:
QC Physics
QD Chemistry
TK7885 Computer engineering
Online Access:http://irep.iium.edu.my/29874/1/JApplPhys_110_123716.pdf
http://irep.iium.edu.my/29874/
http://jap.aip.org/resource/1/japiau/v110/i12/p123716_s1
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Institution: Universiti Islam Antarabangsa Malaysia
Language: English

Internet

http://irep.iium.edu.my/29874/1/JApplPhys_110_123716.pdf
http://irep.iium.edu.my/29874/
http://jap.aip.org/resource/1/japiau/v110/i12/p123716_s1

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