Device characteristics of carbon nanotube transistor fabricated by direct growth method

Device characteristics of carbon nanotube transistor fabricated by direct growth method

We have fabricated carbon nanotube �CNT� field-effect transistors �FETs� by direct growth of single-wall CNTs between the source and drain electrodes, and investigated their device characteristics. The FETs show ambipolar operation. The temperature and bias voltage dependence of device characteris...

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Bibliographic Details
Main Authors: Inami, Nobuhito, Mohamed, Mohd Ambri, Shikoh, Eiji, Fujiwara, Akihiko
Format: Article
Language:English
Published: American Institute of Physics Inc. 2008
Subjects:
QC Physics
TA165 Engineering instruments, meters, etc. Industrial instrumentation
TK7885 Computer engineering
Online Access:http://irep.iium.edu.my/29896/1/ambri_apl.pdf
http://irep.iium.edu.my/29896/
http://apl.aip.org/resource/1/applab/v92/i24/p243115_s1
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Institution: Universiti Islam Antarabangsa Malaysia
Language: English

Internet

http://irep.iium.edu.my/29896/1/ambri_apl.pdf
http://irep.iium.edu.my/29896/
http://apl.aip.org/resource/1/applab/v92/i24/p243115_s1

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