Device characteristics of carbon nanotube transistor fabricated by direct growth method
We have fabricated carbon nanotube �CNT� field-effect transistors �FETs� by direct growth of single-wall CNTs between the source and drain electrodes, and investigated their device characteristics. The FETs show ambipolar operation. The temperature and bias voltage dependence of device characteris...
Saved in:
Main Authors: | , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
American Institute of Physics Inc.
2008
|
Subjects: | |
Online Access: | http://irep.iium.edu.my/29896/1/ambri_apl.pdf http://irep.iium.edu.my/29896/ http://apl.aip.org/resource/1/applab/v92/i24/p243115_s1 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Universiti Islam Antarabangsa Malaysia |
Language: | English |