Channel length effect on the saturation current and the threshold voltages of CNTFET

• Main Authors: Ani, Mohd Hanafi, Muhamad Ali, Abu Hanifah, Mohamed, Mohd Ambri
• Format: Conference or Workshop Item
• Language: English
• Published: IEEE 2014
• Subjects: TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
• Online Access: http://irep.iium.edu.my/40448/1/Channel_length_effect_on_the_saturation_current_and_the_threshold_voltages_of_cntfet.pdf; http://irep.iium.edu.my/40448/; http://ieeexplore.ieee.org/
• Institution: Universiti Islam Antarabangsa Malaysia

Carbon nanotubes (CNTs) are such promising material in future microelectronic devices due to their great property in conductivity, mechanical strength and light weight. Field effect transistor (FET) has already come to its most maximum efficiency because of their reduced size leads to decrease in...