Fabrication of flexible Au/ZnO/ITO/PET memristor using dilute electrodeposition method

DRAM has been approaching its maximum physical limit due to the demand of smaller size and higher capacity memory resistor. The researchers have discovered the abilities of a memristor, a Non Volatile Memory (NVM) that could overcome the size and capacity obstacles. This paper discussed about the de...

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Bibliographic Details
Main Authors: Fauzi, Fatin Bazilah, Ani, Mohd Hanafi, Othman, Raihan, Ahmad Azhar, Ahmad Zahirani, Mohamed, Mohd Ambri, Herman, Sukreen Hana
Format: Conference or Workshop Item
Language:English
English
Published: Institute of Physics 2015
Subjects:
Online Access:http://irep.iium.edu.my/48239/1/Fabrication_of_flexible_Au-zno-ito_memristor_.pdf
http://irep.iium.edu.my/48239/3/48239_Fabrication%20of%20flexible%20Au_SCOPUS%20CONF.pdf
http://irep.iium.edu.my/48239/
http://iopscience.iop.org/article/10.1088/1757-899X/99/1/012002/pdf
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Institution: Universiti Islam Antarabangsa Malaysia
Language: English
English