Effect of the flash annealing on the impurity distribution and the electronic structure in the inversion layer

• Main Authors: Sakata, Tomohiro, Takeda, Sakura Nishino., Ayob, Nur Idayu, Daimon, Hiroshi
• Format: Article
• Language: English; English
• Published: Surface Science Society of Japan 2015
• Subjects: QC Physics; T Technology (General)
• Online Access: http://irep.iium.edu.my/56960/1/56960_Effect%20of%20the%20Flash%20Annealing%20on%20the%20Impurity%20_article.pdf; http://irep.iium.edu.my/56960/2/56960_Effect%20of%20the%20Flash%20Annealing%20on%20the%20Impurity%20_scopus.pdf; http://irep.iium.edu.my/56960/; https://www.jstage.jst.go.jp/article/ejssnt/13/0/13_75/_pdf/-char/en
• Institution: Universiti Islam Antarabangsa Malaysia

We investigated the relationship among the number of flash annealing times to obtain Si clean surface and the change of arsenic dopant concentration and subband levels using secondary ion mass spectroscopy (SIMS) and angle-resolved photoelectron spectroscopy(ARPES). The SIMS result shows that the...