Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition

Since the discovery of graphene, chemical vapor deposition (CVD) is by far the best method to produce the material. However, optimization of the process’ parameters is not yet completed. One of the most debatable issues in CVD is the effects of hydrogen towards graphene. In this research, the qualit...

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Main Authors: Ramlan, Amir Hakimi, Sirat, Mohd Shukri, Ismail, Edhuan, Buys, Yose Fachmi, Purwanto, Hadi, Mohd Mustafah, Yasir, Md Din, Muhammad Faiz, Ani, Mohd Hanafi
Format: Conference or Workshop Item
Language:English
English
Published: Science Direct 2019
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Online Access:http://irep.iium.edu.my/71182/1/71182_Effects%20of%20hydrogen%20during%20annealing.pdf
http://irep.iium.edu.my/71182/7/71182_Effects%20of%20hydrogen%20during%20annealing%20process%20of%20graphene%20synthesis%20via%20chemical%20vapor%20deposition_Scopus.pdf
http://irep.iium.edu.my/71182/
https://www.sciencedirect.com/science/article/pii/S2214785318329869
https://doi.org/10.1016/j.matpr.2018.12.060
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spelling my.iium.irep.711822019-11-26T04:06:25Z http://irep.iium.edu.my/71182/ Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition Ramlan, Amir Hakimi Sirat, Mohd Shukri Ismail, Edhuan Buys, Yose Fachmi Purwanto, Hadi Mohd Mustafah, Yasir Md Din, Muhammad Faiz Ani, Mohd Hanafi T Technology (General) Since the discovery of graphene, chemical vapor deposition (CVD) is by far the best method to produce the material. However, optimization of the process’ parameters is not yet completed. One of the most debatable issues in CVD is the effects of hydrogen towards graphene. In this research, the quality of graphene on copper and palladium substrates as a function of various hydrogen concentrations during annealing as well as different annealing times is studied. Copper and palladium substrates are chosen due to their difference in carbon/hydrogen diffusivity and solubility. Raman analysis showed that upon annealing under higher hydrogen concentration, the graphene grown is defective and with multiple layers. On the other hand, prolonged annealing time is detrimental to the quality of both substrates. Empirical-based calculations showed that both substrates experienced an increase in graphene layers as both H2 concentration and annealing time were increased. We postulate that the presence of defects and multilayer graphene are caused by the hydrogen trapping phenomenon inside the substrates’ vacancies and also the activation of potential defects’ sites through hydrogen adsorption. Graphical representations of the relationship between hydrogen concentration and annealing time towards graphene quality were plotted to suggest the optimized parameters in producing pristine graphene. Science Direct 2019 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/71182/1/71182_Effects%20of%20hydrogen%20during%20annealing.pdf application/pdf en http://irep.iium.edu.my/71182/7/71182_Effects%20of%20hydrogen%20during%20annealing%20process%20of%20graphene%20synthesis%20via%20chemical%20vapor%20deposition_Scopus.pdf Ramlan, Amir Hakimi and Sirat, Mohd Shukri and Ismail, Edhuan and Buys, Yose Fachmi and Purwanto, Hadi and Mohd Mustafah, Yasir and Md Din, Muhammad Faiz and Ani, Mohd Hanafi (2019) Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition. In: Nanotech Malaysia 2018 in conjunction with 3rd International Conference on Enabling Science and Nanotechnology (ESciNano 2018), 5th Malaysia Workshop on 2D Materials and Carbon Nanotube (2DMC 2018), 7th-9th May 2018, Kuala Lumpur. https://www.sciencedirect.com/science/article/pii/S2214785318329869 https://doi.org/10.1016/j.matpr.2018.12.060
institution Universiti Islam Antarabangsa Malaysia
building IIUM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider International Islamic University Malaysia
content_source IIUM Repository (IREP)
url_provider http://irep.iium.edu.my/
language English
English
topic T Technology (General)
spellingShingle T Technology (General)
Ramlan, Amir Hakimi
Sirat, Mohd Shukri
Ismail, Edhuan
Buys, Yose Fachmi
Purwanto, Hadi
Mohd Mustafah, Yasir
Md Din, Muhammad Faiz
Ani, Mohd Hanafi
Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition
description Since the discovery of graphene, chemical vapor deposition (CVD) is by far the best method to produce the material. However, optimization of the process’ parameters is not yet completed. One of the most debatable issues in CVD is the effects of hydrogen towards graphene. In this research, the quality of graphene on copper and palladium substrates as a function of various hydrogen concentrations during annealing as well as different annealing times is studied. Copper and palladium substrates are chosen due to their difference in carbon/hydrogen diffusivity and solubility. Raman analysis showed that upon annealing under higher hydrogen concentration, the graphene grown is defective and with multiple layers. On the other hand, prolonged annealing time is detrimental to the quality of both substrates. Empirical-based calculations showed that both substrates experienced an increase in graphene layers as both H2 concentration and annealing time were increased. We postulate that the presence of defects and multilayer graphene are caused by the hydrogen trapping phenomenon inside the substrates’ vacancies and also the activation of potential defects’ sites through hydrogen adsorption. Graphical representations of the relationship between hydrogen concentration and annealing time towards graphene quality were plotted to suggest the optimized parameters in producing pristine graphene.
format Conference or Workshop Item
author Ramlan, Amir Hakimi
Sirat, Mohd Shukri
Ismail, Edhuan
Buys, Yose Fachmi
Purwanto, Hadi
Mohd Mustafah, Yasir
Md Din, Muhammad Faiz
Ani, Mohd Hanafi
author_facet Ramlan, Amir Hakimi
Sirat, Mohd Shukri
Ismail, Edhuan
Buys, Yose Fachmi
Purwanto, Hadi
Mohd Mustafah, Yasir
Md Din, Muhammad Faiz
Ani, Mohd Hanafi
author_sort Ramlan, Amir Hakimi
title Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition
title_short Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition
title_full Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition
title_fullStr Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition
title_full_unstemmed Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition
title_sort effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition
publisher Science Direct
publishDate 2019
url http://irep.iium.edu.my/71182/1/71182_Effects%20of%20hydrogen%20during%20annealing.pdf
http://irep.iium.edu.my/71182/7/71182_Effects%20of%20hydrogen%20during%20annealing%20process%20of%20graphene%20synthesis%20via%20chemical%20vapor%20deposition_Scopus.pdf
http://irep.iium.edu.my/71182/
https://www.sciencedirect.com/science/article/pii/S2214785318329869
https://doi.org/10.1016/j.matpr.2018.12.060
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