Coupling heterostructure of thickness-controlled nickel oxidenanosheets layer and titanium dioxide nanorod arrays via immersionroute for self-powered solid-state ultraviolet photosensor applications

A coupling heterostructure consisting of nickel oxide nanosheets (NNS) and titanium dioxide nanorod arrays (TNAs) was fabricated for self-powered solid-state ultraviolet (UV) photosensor applications. By controlling the thickness of the NNS layer by via varying the growth time from 1 to 5 h at a dep...

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Main Authors: Mohd Yusoff, Marmeezee, Mamat, Mohamad Hafiz, Abdullah, Mardhiah, Ismail, Ahmad Syakirin, Malek, Mohd Firdaus, Zoolfakar, Ahmad Sabirin, Al Junid, Syed Abdul Mutalib, Abu Bakar, Suriani, Mohamed, Azmi, Ahmad, Mohd Khairul, Shameem Banu, Itreesh Basha, Rusop, Mohamad
Format: Article
Language:English
English
English
Published: Elsevier B.V. 2020
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Online Access:http://irep.iium.edu.my/80399/1/80399_Coupling%20heterostructure%20of%20thickness.pdf
http://irep.iium.edu.my/80399/2/80399_Coupling%20heterostructure%20of%20thickness_SCOPUS.pdf
http://irep.iium.edu.my/80399/3/80399_Coupling%20heterostructure%20of%20thickness_WOS.pdf
http://irep.iium.edu.my/80399/
https://www.sciencedirect.com/science/article/pii/S0263224119308486
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Institution: Universiti Islam Antarabangsa Malaysia
Language: English
English
English
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Summary:A coupling heterostructure consisting of nickel oxide nanosheets (NNS) and titanium dioxide nanorod arrays (TNAs) was fabricated for self-powered solid-state ultraviolet (UV) photosensor applications. By controlling the thickness of the NNS layer by via varying the growth time from 1 to 5 h at a deposition temperature of 90 °C, the coupling NNS/TNAs heterojunction films were formed and their structural, optical, electrical and UV photoresponse properties were investigated. The photocurrent measured from the fabricated self-powered UV photosensor was improved by increasing the thickness of NNS from 140 to 170 nm under UV irradiation (365 nm, 750 µWcm−2) at 0 V bias. A maximum photocurrent density of 0.510 µA∙cm−2 was achieved for a sample with a NNS thickness of 170 nm and prepared with a 3 h NNS growth time. Our results showed that the fabricated NNS/TNAs heterojunction has potential applications for self-powered UV photosensors.