Investigation on P-N junction I-V characteristics of p-Si/n-TiO2: article / Mohd Farhan Azwa Alias
The effect of annealing time on electrical properties and physical properties (surface morphology) of p-n junction between p-type silicon (Si) and n-type titanium oxide (TiC^) were investigated. By varying the parameter of the annealing time, the Ti02 thin films were deposited on silicon and glass s...
Saved in:
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
2015
|
| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/105255/1/105255.pdf https://ir.uitm.edu.my/id/eprint/105255/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Universiti Teknologi Mara |
| Language: | English |