Low-temperature growth of polycrystalline si thin film using RF magnetron sputtering / Shaiful Bakhtiar Hashim

A study on the growth of polycrystalline Silicon (poly-Si) on a glass Substrate at low temperature is being studied. The preparation was done by using direct deposition of Radiofrequency (RF) magnetron sputtering method. The physical and crystallinity of thin films was studied and investigated to fo...

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Main Author: Hashim, Shaiful Bakhtiar
Format: Thesis
Language:English
Published: 2014
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Online Access:https://ir.uitm.edu.my/id/eprint/11932/2/11932.pdf
https://ir.uitm.edu.my/id/eprint/11932/
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Institution: Universiti Teknologi Mara
Language: English
id my.uitm.ir.11932
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spelling my.uitm.ir.119322024-12-03T07:26:35Z https://ir.uitm.edu.my/id/eprint/11932/ Low-temperature growth of polycrystalline si thin film using RF magnetron sputtering / Shaiful Bakhtiar Hashim Hashim, Shaiful Bakhtiar TK Electrical engineering. Electronics. Nuclear engineering A study on the growth of polycrystalline Silicon (poly-Si) on a glass Substrate at low temperature is being studied. The preparation was done by using direct deposition of Radiofrequency (RF) magnetron sputtering method. The physical and crystallinity of thin films was studied and investigated to focus on various deposition parameters such as RF power of 100 W to 300 W, deposition temperature of room temperature to 200 °C, sputtering pressure of 5 mTorr to 8 mTorr, argon gas flow rate of 40 sccm to 100 sccm and also the influence of Substrate bias power of +10 W to +150 W. The physical structures of the thin films were observed by using field emission scanning electron microscope (FESEM), JOEL JSM 7600F, atomic force microscope (AFM) XE-100 Park System AFM and Surface Profiler (SP, KLA Tencor P-6). The crystallinity of the thin films was observed by Raman spectroscopy (Horiba Jobin Yvon). Through the investigation, we found that even giving higher RF power, the thin films Start to crystallize but poly-Si thin films still not achieved. To overcome this problem, we explored the role of Substrate bias to fiirther enhance the crystallization of the thin films. The Substrate bias may provide higher energy during the bombardment and at the same time modifies the arrangement of particles to produce high crystalline quality. The results of the thickness and deposition rate measurements show that Substrate bias has influence on the growth of films on the Substrate. As the Substrate bias increase the deposition rate also increases due to the number of atom collision at the target which iead increasing the particles on the Substrate. From Raman spectroscopy result it showed that the Si-Si transverse optical (TO) peak was around 518 cm"1 for sample deposited at +30 W which indicates the existence of poly-Si phase. It shows that the thin film crystallized even at room temperature deposition with the influenced of the Substrate bias. 2014 Thesis NonPeerReviewed text en https://ir.uitm.edu.my/id/eprint/11932/2/11932.pdf Low-temperature growth of polycrystalline si thin film using RF magnetron sputtering / Shaiful Bakhtiar Hashim. (2014) Masters thesis, thesis, Universiti Teknologi MARA (UiTM). <http://terminalib.uitm.edu.my/11932.pdf>
institution Universiti Teknologi Mara
building Tun Abdul Razak Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Mara
content_source UiTM Institutional Repository
url_provider http://ir.uitm.edu.my/
language English
topic TK Electrical engineering. Electronics. Nuclear engineering
spellingShingle TK Electrical engineering. Electronics. Nuclear engineering
Hashim, Shaiful Bakhtiar
Low-temperature growth of polycrystalline si thin film using RF magnetron sputtering / Shaiful Bakhtiar Hashim
description A study on the growth of polycrystalline Silicon (poly-Si) on a glass Substrate at low temperature is being studied. The preparation was done by using direct deposition of Radiofrequency (RF) magnetron sputtering method. The physical and crystallinity of thin films was studied and investigated to focus on various deposition parameters such as RF power of 100 W to 300 W, deposition temperature of room temperature to 200 °C, sputtering pressure of 5 mTorr to 8 mTorr, argon gas flow rate of 40 sccm to 100 sccm and also the influence of Substrate bias power of +10 W to +150 W. The physical structures of the thin films were observed by using field emission scanning electron microscope (FESEM), JOEL JSM 7600F, atomic force microscope (AFM) XE-100 Park System AFM and Surface Profiler (SP, KLA Tencor P-6). The crystallinity of the thin films was observed by Raman spectroscopy (Horiba Jobin Yvon). Through the investigation, we found that even giving higher RF power, the thin films Start to crystallize but poly-Si thin films still not achieved. To overcome this problem, we explored the role of Substrate bias to fiirther enhance the crystallization of the thin films. The Substrate bias may provide higher energy during the bombardment and at the same time modifies the arrangement of particles to produce high crystalline quality. The results of the thickness and deposition rate measurements show that Substrate bias has influence on the growth of films on the Substrate. As the Substrate bias increase the deposition rate also increases due to the number of atom collision at the target which iead increasing the particles on the Substrate. From Raman spectroscopy result it showed that the Si-Si transverse optical (TO) peak was around 518 cm"1 for sample deposited at +30 W which indicates the existence of poly-Si phase. It shows that the thin film crystallized even at room temperature deposition with the influenced of the Substrate bias.
format Thesis
author Hashim, Shaiful Bakhtiar
author_facet Hashim, Shaiful Bakhtiar
author_sort Hashim, Shaiful Bakhtiar
title Low-temperature growth of polycrystalline si thin film using RF magnetron sputtering / Shaiful Bakhtiar Hashim
title_short Low-temperature growth of polycrystalline si thin film using RF magnetron sputtering / Shaiful Bakhtiar Hashim
title_full Low-temperature growth of polycrystalline si thin film using RF magnetron sputtering / Shaiful Bakhtiar Hashim
title_fullStr Low-temperature growth of polycrystalline si thin film using RF magnetron sputtering / Shaiful Bakhtiar Hashim
title_full_unstemmed Low-temperature growth of polycrystalline si thin film using RF magnetron sputtering / Shaiful Bakhtiar Hashim
title_sort low-temperature growth of polycrystalline si thin film using rf magnetron sputtering / shaiful bakhtiar hashim
publishDate 2014
url https://ir.uitm.edu.my/id/eprint/11932/2/11932.pdf
https://ir.uitm.edu.my/id/eprint/11932/
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