Dimensional effect of doped porous ge using SILVACO TCAD simulation for potential optoelectronics application / A.F. Abd Rahim …[et al.]

• Main Authors: Abd Rahim, A.F., Mohamad Shuhaimi, N. S. I., Mohd Razal, N. S., Radzali, R., Mahmood, A., Hamzah, I.H., Packeer Mohamed, M F
• Format: Article
• Language: English
• Published: Universiti Teknologi MARA Cawangan Pulau Pinang 2021
• Subjects: Electricity and magnetism; Doping
• Online Access: https://ir.uitm.edu.my/id/eprint/2917/1/2917.pdf; https://ir.uitm.edu.my/id/eprint/2917/; https://uppp.uitm.edu.my
• Institution: Universiti Teknologi Mara

Ge is considered to have several advantages over Si due to its high mobility and direct band gap, which makes it ideal for optoelectronic applications. The manipulation of bulk Ge into small structures has drawn a lot of interest due to the numerous distinctive properties caused by the impact of siz...