Preparation and characterization of undoped porous Gallium Nitride (GaN) by UV assisted electrochemical etching / Mohd Bukhari Md Yunus, Ainorkhilah Mahmood and Zainuriah Hassan.

• Main Authors: Md Yunus, Mohd Bukhari, Mahmood, Ainorkhilah, Hassan, Zainuriah
• Format: Research Reports
• Language: English
• Published: 2011
• Subjects: Electronics; Apparatus and materials; Filters (Electric); Microelectromechanical systems
• Online Access: http://ir.uitm.edu.my/id/eprint/41706/1/41706.PDF; http://ir.uitm.edu.my/id/eprint/41706/
• Institution: Universiti Teknologi Mara

lll-V nitride semiconductors such as GaN, InN and AIN and their alloys (AIGaN, InGaN, AlInGaN) have been investigated intensively in the last decade for their practical applications in short wavelength optoelectronic devices and high power/high frequency/high temperature electronic devices. These ex...