Modeling of “strain technology” on 140nm CMOS devices / Ahmad Sabirin Zoolfakar, Noor Irmahani Mohmad Tahiruddin and Lyly Nyl Ismail

• Main Authors: Zoolfakar, Ahmad Sabirin, Mohmad Tahiruddin, Noor Irmahani, Ismail, Lyly Nyl
• Format: Article
• Language: English
• Published: UiTM Press 2009
• Subjects: Electric apparatus and materials. Electric circuits. Electric networks
• Online Access: https://ir.uitm.edu.my/id/eprint/61856/1/61856.pdf; https://ir.uitm.edu.my/id/eprint/61856/; https://jeesr.uitm.edu.my/v1/
• Institution: Universiti Teknologi Mara

A 140nm Complementary Metal Oxide Semiconductor (CMOS) was designed and simulated to investigate stress effects on device performance. Stress can be divided into two categories which are compressive and tensile stress. Strain technology is capable to introduce stress to the CMOS devices. The strain...