Investigation of doping techniques on the silicon based capacitor / Ahmad Sabirin Zoolfakar ...[et al.]

• Main Authors: Zoolfakar, Ahmad Sabirin, Yaacob, Ahmad Akmalhakim, Zolkapli, Maizatul, Zakaria, Azlan, Abdul Wahab, Mohd Zahrin
• Format: Article
• Language: English
• Published: UiTM Press 2010
• Subjects: TK Electrical engineering. Electronics. Nuclear engineering
• Online Access: https://ir.uitm.edu.my/id/eprint/61883/1/61883.pdf; https://ir.uitm.edu.my/id/eprint/61883/; https://jeesr.uitm.edu.my/v1/
• Institution: Universiti Teknologi Mara

This technical paper investigates the effect of doping techniques, type of dopant species and the plate size on the capacitance density of a silicon based capacitor. The substrate of the silicon wafers are highly doped using either solid source (SS) or spin-on dopant (SOD) method. Experiments are carried out at three different diffusion temperatures, 900oC, 1000oC and 1050oC. Results show that the diffusion by spin-on dopant gives a higher capacitance density compared to diffusion by solid source while larger plate size leads to a larger capacitance value. In addition, the experiment also shows that n-type wafer heavily doped with phosphorus exhibits a higher capacitance density.