The effect of gate geometric effect and polysilicon doping on the performance of scaled NMOS / Muhammad Luqman Nurhakim Kamarudin... [et al.]

• Main Authors: Kamarudin, Muhammad Luqman Nurhakim, Abd Rahim, Alhan Farhanah, Mohd Razali, Nurul Syuhadah, Radzali, Rosfariza, Mahmood, Ainorkhilah, Hamzah, Irni Hamiza, Idris, Mohaiyedin, Mohamed, Mohamed Fauzi Packeer
• Format: Article
• Language: English
• Published: Universiti Teknologi MARA Cawangan Pulau Pinang 2023
• Subjects: LG Individual institutions; Malaysia; Pulau Pinang; Universiti Teknologi MARA; Asia; TK Electrical engineering. Electronics. Nuclear engineering; Electronics; Apparatus and materials; Semiconductors; Applications of electronics
• Online Access: https://ir.uitm.edu.my/id/eprint/76051/1/76051.pdf; https://ir.uitm.edu.my/id/eprint/76051/; https://uppp.uitm.edu.my/
• Institution: Universiti Teknologi Mara

Insufficiently high doping in polysilicon gates of metal oxide semiconductor field effect transistor (MOSFET) becomes unavoidable due to the demands for low-energy ion implantation and limited annealing conditions to achieve ultra-shallow source and drain junctions. This results in the poly-depletio...