Design of 6T memory cell and sense amplifier for SRAM / Nor Shariza Bashar

This paper presents of lbit SRAM IC design consists of SRAM cells, precharge and PMOS across amplifier using TSMC 0.25um technology. The PMOS cross amplifier is designed to sense the signal voltage on the bit line from the memory cell for the read process because it has better output driving capabil...

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Bibliographic Details
Main Author: Bashar, Nor Shariza Bashar
Format: Thesis
Language:English
Published: 2006
Subjects:
Online Access:https://ir.uitm.edu.my/id/eprint/98641/1/98641.pdf
https://ir.uitm.edu.my/id/eprint/98641/
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Institution: Universiti Teknologi Mara
Language: English

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