Analytical Model for Broadband Thulium-Bismuth-Doped Fiber Amplifier

Due to the tremendous growth in applications for fiber laser in medical science, sensor solution, and light detection and ranging system at 1.8 to 2-μm region, more research efforts have been directed toward developing highly efficient broadband fiber amplifiers in this range. In order to amplify th...

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Main Authors: Fatehi, Hossein, Emami, Siamak Dawazdah, Zarifi, Atiyeh, Zahedi, Fatemeh Zahra, Mirnia, Seyed Edriss, Zarei, Arman, Ahmad, Harith, Harun, Sulaiman Wadi
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出版: Institute of Electrical and Electronics Engineers (IEEE) 2012
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在線閱讀:http://eprints.um.edu.my/19917/
https://doi.org/10.1109/JQE.2012.2199739
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spelling my.um.eprints.199172019-01-07T06:18:50Z http://eprints.um.edu.my/19917/ Analytical Model for Broadband Thulium-Bismuth-Doped Fiber Amplifier Fatehi, Hossein Emami, Siamak Dawazdah Zarifi, Atiyeh Zahedi, Fatemeh Zahra Mirnia, Seyed Edriss Zarei, Arman Ahmad, Harith Harun, Sulaiman Wadi QC Physics TK Electrical engineering. Electronics Nuclear engineering Due to the tremendous growth in applications for fiber laser in medical science, sensor solution, and light detection and ranging system at 1.8 to 2-μm region, more research efforts have been directed toward developing highly efficient broadband fiber amplifiers in this range. In order to amplify this region, Thulium-Bismuth-doped fiber amplifier (TBDFA) is proposed in conjunction with 800-nm pumping. Optimal Thulium ion concentration of 4.17 × 10 26 ion/m 3 and Bismuth ion concentration of 2.08 × 10 26 ion/m 3 together with low phonon energy of germanate glass lead to the highest energy transfer rates. Effective energy transfer mechanism from Bismuth to Thulium in addition to the cross relaxation process between Thulium ions results in higher amplification, efficiency, and super broadband amplification in TBDFA. We analytically solve the rate equations of TBDFA including the effect of energy transfer in order to calculate the broadband amplifier gain. Institute of Electrical and Electronics Engineers (IEEE) 2012 Article PeerReviewed Fatehi, Hossein and Emami, Siamak Dawazdah and Zarifi, Atiyeh and Zahedi, Fatemeh Zahra and Mirnia, Seyed Edriss and Zarei, Arman and Ahmad, Harith and Harun, Sulaiman Wadi (2012) Analytical Model for Broadband Thulium-Bismuth-Doped Fiber Amplifier. IEEE Journal of Quantum Electronics, 48 (8). pp. 1052-1058. ISSN 0018-9197 https://doi.org/10.1109/JQE.2012.2199739 doi:10.1109/JQE.2012.2199739
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic QC Physics
TK Electrical engineering. Electronics Nuclear engineering
spellingShingle QC Physics
TK Electrical engineering. Electronics Nuclear engineering
Fatehi, Hossein
Emami, Siamak Dawazdah
Zarifi, Atiyeh
Zahedi, Fatemeh Zahra
Mirnia, Seyed Edriss
Zarei, Arman
Ahmad, Harith
Harun, Sulaiman Wadi
Analytical Model for Broadband Thulium-Bismuth-Doped Fiber Amplifier
description Due to the tremendous growth in applications for fiber laser in medical science, sensor solution, and light detection and ranging system at 1.8 to 2-μm region, more research efforts have been directed toward developing highly efficient broadband fiber amplifiers in this range. In order to amplify this region, Thulium-Bismuth-doped fiber amplifier (TBDFA) is proposed in conjunction with 800-nm pumping. Optimal Thulium ion concentration of 4.17 × 10 26 ion/m 3 and Bismuth ion concentration of 2.08 × 10 26 ion/m 3 together with low phonon energy of germanate glass lead to the highest energy transfer rates. Effective energy transfer mechanism from Bismuth to Thulium in addition to the cross relaxation process between Thulium ions results in higher amplification, efficiency, and super broadband amplification in TBDFA. We analytically solve the rate equations of TBDFA including the effect of energy transfer in order to calculate the broadband amplifier gain.
format Article
author Fatehi, Hossein
Emami, Siamak Dawazdah
Zarifi, Atiyeh
Zahedi, Fatemeh Zahra
Mirnia, Seyed Edriss
Zarei, Arman
Ahmad, Harith
Harun, Sulaiman Wadi
author_facet Fatehi, Hossein
Emami, Siamak Dawazdah
Zarifi, Atiyeh
Zahedi, Fatemeh Zahra
Mirnia, Seyed Edriss
Zarei, Arman
Ahmad, Harith
Harun, Sulaiman Wadi
author_sort Fatehi, Hossein
title Analytical Model for Broadband Thulium-Bismuth-Doped Fiber Amplifier
title_short Analytical Model for Broadband Thulium-Bismuth-Doped Fiber Amplifier
title_full Analytical Model for Broadband Thulium-Bismuth-Doped Fiber Amplifier
title_fullStr Analytical Model for Broadband Thulium-Bismuth-Doped Fiber Amplifier
title_full_unstemmed Analytical Model for Broadband Thulium-Bismuth-Doped Fiber Amplifier
title_sort analytical model for broadband thulium-bismuth-doped fiber amplifier
publisher Institute of Electrical and Electronics Engineers (IEEE)
publishDate 2012
url http://eprints.um.edu.my/19917/
https://doi.org/10.1109/JQE.2012.2199739
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