A comparative study of lifetime reliability of planar MOSFET and FinFET due to BTI for the 16 nm CMOS technology node based on reaction-diffusion model
Intensive scaling of Integrated Circuits is a crucial factor for achieving high performance and astronomical packing density. However, this scaling is pushing planar MOSFET to its physical limitations. Nowadays, FinFET emerges as a promising alternative technology for planar MOSFET, due to their bet...
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Main Authors: | , |
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Format: | Article |
Published: |
Elsevier
2019
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Subjects: | |
Online Access: | http://eprints.um.edu.my/23959/ https://doi.org/10.1016/j.microrel.2019.03.007 |
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Institution: | Universiti Malaya |