A comparative study of lifetime reliability of planar MOSFET and FinFET due to BTI for the 16 nm CMOS technology node based on reaction-diffusion model

Intensive scaling of Integrated Circuits is a crucial factor for achieving high performance and astronomical packing density. However, this scaling is pushing planar MOSFET to its physical limitations. Nowadays, FinFET emerges as a promising alternative technology for planar MOSFET, due to their bet...

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Bibliographic Details
Main Authors: Mahmoud, Mohamed Mounir, Soin, Norhayati
Format: Article
Published: Elsevier 2019
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Online Access:http://eprints.um.edu.my/23959/
https://doi.org/10.1016/j.microrel.2019.03.007
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Institution: Universiti Malaya